| DOI | Resolve DOI: https://doi.org/10.1016/j.corsci.2006.05.004 |
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| Author | Search for: Graham, M. J.1; Search for: Moisa, S.1; Search for: Sproule, G. I.1; Search for: Wu, X.1; Search for: Landheer, D.1; Search for: SpringThorpe, A. J.1; Search for: Barrios, P.1; Search for: Klebber, S.; Search for: Schmuki, P. |
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| Affiliation | - National Research Council of Canada. NRC Institute for Microstructural Sciences
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| Format | Text, Article |
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| Conference | Progress in Corrosion Research in Commemoration of Centenary of Birth of Professor Go Okamoto, International Symposium on “Progress in Corrosion Research”, 14–16 September 2005, Sapporo, Japan |
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| Subject | Electronic materials; AES, XPS, TEM; Oxidation Wlms |
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| Abstract | This paper focuses on the characterization of anodic films (formed in aqueous electrolytes) and thermal oxides (formed at ∼500 °C) on GaAs, InP, AlGaAs, InAlAs, InAlP and heterostructures for GaAs- and InP-based devices. Emphasis is placed on Al-containing oxides, particularly on InAlP which possess good insulating properties. The composition and nature of the oxides have been determined by Auger electron spectroscopy, X-ray photoelectron spectroscopy, 16O/18O secondary ion mass spectrometry, Rutherford backscattering spectroscopy, scanning and transmission electron microscopy. Electrical measurements performed on metal–insulator–semiconductor (MIS) structures indicate that the Al-containing oxides have good electrical properties making the films potentially useful for some device applications. |
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| Publication date | 2007-01-01 |
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| In | |
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| Language | English |
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| NPARC number | 12744914 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | 06d0faf7-8c8f-4319-bb16-476ae805279b |
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| Record created | 2009-10-27 |
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| Record modified | 2020-05-10 |
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