| DOI | Trouver le DOI : https://doi.org/10.1016/j.corsci.2006.05.004 |
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| Auteur | Rechercher : Graham, M. J.1; Rechercher : Moisa, S.1; Rechercher : Sproule, G. I.1; Rechercher : Wu, X.1; Rechercher : Landheer, D.1; Rechercher : SpringThorpe, A. J.1; Rechercher : Barrios, P.1; Rechercher : Klebber, S.; Rechercher : Schmuki, P. |
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| Affiliation | - Conseil national de recherches du Canada. Institut des sciences des microstructures du CNRC
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| Format | Texte, Article |
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| Conférence | Progress in Corrosion Research in Commemoration of Centenary of Birth of Professor Go Okamoto, International Symposium on “Progress in Corrosion Research”, 14–16 September 2005, Sapporo, Japan |
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| Sujet | Electronic materials; AES, XPS, TEM; Oxidation Wlms |
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| Résumé | This paper focuses on the characterization of anodic films (formed in aqueous electrolytes) and thermal oxides (formed at ∼500 °C) on GaAs, InP, AlGaAs, InAlAs, InAlP and heterostructures for GaAs- and InP-based devices. Emphasis is placed on Al-containing oxides, particularly on InAlP which possess good insulating properties. The composition and nature of the oxides have been determined by Auger electron spectroscopy, X-ray photoelectron spectroscopy, 16O/18O secondary ion mass spectrometry, Rutherford backscattering spectroscopy, scanning and transmission electron microscopy. Electrical measurements performed on metal–insulator–semiconductor (MIS) structures indicate that the Al-containing oxides have good electrical properties making the films potentially useful for some device applications. |
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| Date de publication | 2007-01-01 |
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| Dans | |
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| Langue | anglais |
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| Numéro NPARC | 12744914 |
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| Exporter la notice | Exporter en format RIS |
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| Signaler une correction | Signaler une correction (s'ouvre dans un nouvel onglet) |
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| Identificateur de l’enregistrement | 06d0faf7-8c8f-4319-bb16-476ae805279b |
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| Enregistrement créé | 2009-10-27 |
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| Enregistrement modifié | 2020-05-10 |
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