| DOI | Resolve DOI: https://doi.org/10.1103/PhysRevB.89.035315 |
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| Author | Search for: Shaterzadeh-Yazdi, Z.; Search for: Livadaru, L.1; Search for: Taucer, M.1; Search for: Mutus, J.1; Search for: Pitters, J.1; Search for: Wolkow, R.A.1; Search for: Sanders, B.C. |
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| Affiliation | - National Research Council of Canada. National Institute for Nanotechnology
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| Format | Text, Article |
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| Abstract | We devise a scheme to characterize tunneling of an excess electron shared by a pair of tunnel-coupled dangling bonds on a silicon surface - effectively a two-level system. Theoretical estimates show that the tunneling should be highly coherent but too fast to be measured by any conventional techniques. Our approach is instead to measure the time-averaged charge distribution of our dangling-bond pair by a capacitively coupled atomic-force-microscope tip in the presence of both a surface-parallel electrostatic potential bias between the two dangling bonds and a tunable midinfrared laser capable of inducing Rabi oscillations in the system. With a nonresonant laser, the time-averaged charge distribution in the dangling-bond pair is asymmetric as imposed by the bias. However, as the laser becomes resonant with the coherent electron tunneling in the biased pair the theory predicts that the time-averaged charge distribution becomes symmetric. This resonant symmetry effect should not only reveal the tunneling rate, but also the nature and rate of decoherence of single-electron dynamics in our system. © 2014 American Physical Society. |
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| Publication date | 2014 |
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| In | |
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| Language | English |
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| Peer reviewed | Yes |
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| NPARC number | 21272219 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | 09ea74c3-5efd-4f30-be97-996278b4d3ec |
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| Record created | 2014-07-23 |
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| Record modified | 2020-04-22 |
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