| DOI | Trouver le DOI : https://doi.org/10.1103/PhysRevB.89.035315 |
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| Auteur | Rechercher : Shaterzadeh-Yazdi, Z.; Rechercher : Livadaru, L.1; Rechercher : Taucer, M.1; Rechercher : Mutus, J.1; Rechercher : Pitters, J.1; Rechercher : Wolkow, R.A.1; Rechercher : Sanders, B.C. |
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| Affiliation | - Conseil national de recherches du Canada. Institut national de nanotechnologie
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| Format | Texte, Article |
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| Résumé | We devise a scheme to characterize tunneling of an excess electron shared by a pair of tunnel-coupled dangling bonds on a silicon surface - effectively a two-level system. Theoretical estimates show that the tunneling should be highly coherent but too fast to be measured by any conventional techniques. Our approach is instead to measure the time-averaged charge distribution of our dangling-bond pair by a capacitively coupled atomic-force-microscope tip in the presence of both a surface-parallel electrostatic potential bias between the two dangling bonds and a tunable midinfrared laser capable of inducing Rabi oscillations in the system. With a nonresonant laser, the time-averaged charge distribution in the dangling-bond pair is asymmetric as imposed by the bias. However, as the laser becomes resonant with the coherent electron tunneling in the biased pair the theory predicts that the time-averaged charge distribution becomes symmetric. This resonant symmetry effect should not only reveal the tunneling rate, but also the nature and rate of decoherence of single-electron dynamics in our system. © 2014 American Physical Society. |
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| Date de publication | 2014 |
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| Dans | |
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| Langue | anglais |
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| Publications évaluées par des pairs | Oui |
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| Numéro NPARC | 21272219 |
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| Exporter la notice | Exporter en format RIS |
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| Signaler une correction | Signaler une correction (s'ouvre dans un nouvel onglet) |
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| Identificateur de l’enregistrement | 09ea74c3-5efd-4f30-be97-996278b4d3ec |
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| Enregistrement créé | 2014-07-23 |
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| Enregistrement modifié | 2020-04-22 |
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