| Download | - View accepted manuscript: Few-electron quantum dots in InGaAs quantum wells: Role of fluctuations (PDF, 638 KiB)
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| DOI | Resolve DOI: https://doi.org/10.1063/1.3574540 |
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| Author | Search for: Granger, G.1; Search for: Studenikin, S. A.1; Search for: Kam, A.1; Search for: Sachrajda, A. S.1; Search for: Poole, P. J.1 |
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| Affiliation | - National Research Council of Canada. NRC Institute for Microstructural Sciences
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| Format | Text, Article |
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| Abstract | We study the electron transport properties of gated quantum dots formed in InGaAs/InP quantum well structures grown by chemical-beam epitaxy on prepatterned substrates. Quantum dots form directly underneath narrow gates due to potential fluctuations. We measure the Coulomb-blockade diamonds in the few-electron regime of a single dot and observe photon-assisted tunneling peaks under microwave irradiation. A singlet-triplet transition at high magnetic field and Coulomb-blockade in the quantum Hall regime are also observed. |
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| Publication date | 2011-04-01 |
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| In | |
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| Language | English |
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| Peer reviewed | Yes |
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| NPARC number | 17696151 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | 0a72b3b1-1ee6-40bb-8853-06ecc881412a |
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| Record created | 2011-04-05 |
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| Record modified | 2020-04-21 |
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