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Performance improvement of CoTiO3 high-k dielectrics with nitrogen incorporation

From National Research Council Canada

DOIResolve DOI: https://doi.org/10.1149/1.2388733
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Affiliation
  1. National Research Council of Canada. NRC Institute for Microstructural Sciences
FormatText, Article
Abstract
In this paper, three approaches to incorporating nitrogen in CoTiO3 high-k dielectric films, ion implantation of N2+, ion implantation of N+, and N2O plasma treatment have been investigated for the new CoTiO3 high-k dielectrics. All three methods reduced the leakage currents and improved the breakdown characteristics but the N2O-plasma treatment produced the best-behaved C-V curves, when compared to the untreated control samples.
Publication date
In
  • Journal of the Electrochemical Society 154, no. 1 (2007): G18–G23.
NPARC number12744501
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Record identifier0beeaddc-8e47-4561-a8e5-d82f2d0740fe
Record created2009-10-27
Record modified2020-05-10
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