| Author | Search for: Coleridge, P. T.1; Search for: Feng, Y.1; Search for: Lafontaine, H.1; Search for: Sachrajda, A. S.1; Search for: Williams, R.1; Search for: Zawadzki, P.1 |
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| Affiliation | - National Research Council of Canada. NRC Institute for Microstructural Sciences
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| Format | Text, Article |
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| Conference | Conference On Optoelectronic And Microelectronic Materials And Devices, December 8-11, 1996, Canberra, Australia |
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| Abstract | A brief survey is given of ways SiGe alloys can be integrated into microelectronic devices. The growth of a series of modulation doped p-type strained Si.₈₈Ge.₁₂ quantum wells is described and the results of characterisation using low temperature magnetotransport presented. Comments are also made about the appearance, in some samples, of an insulating phase at low temperatures. |
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| Publication date | 1996-12 |
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| In | |
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| Language | English |
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| NPARC number | 12328055 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | 0d6ece8c-908a-48b8-8da1-a2f8cd7e83ca |
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| Record created | 2009-09-10 |
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| Record modified | 2020-03-20 |
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