On free-exciton behavior in molecular-beam epitaxially grown Si₁₋ₓGeₓ quantum wells
On free-exciton behavior in molecular-beam epitaxially grown Si₁₋ₓGeₓ quantum wells
| DOI | Resolve DOI: https://doi.org/10.1116/1.586820 |
|---|---|
| Author | Search for: ; Search for: ; Search for: ; Search for: ; Search for: |
| Format | Text, Article |
| Publication date | 1993-05 |
| In | |
| Language | English |
| Peer reviewed | Yes |
| NRC number | NRC-INMS-1156 |
| NPARC number | 8899837 |
| Export citation | Export as RIS |
| Report a correction | Report a correction (opens in a new tab) |
| Record identifier | 1116b49f-edff-4bd8-90d1-3a5e601720b8 |
| Record created | 2009-04-22 |
| Record modified | 2020-04-24 |
- Date modified: