On the breakdown of layer-by-layer growth and the spontaneous nucleation of misfit dislocations in molecular-beam epitaxially grown GeSi/Si
On the breakdown of layer-by-layer growth and the spontaneous nucleation of misfit dislocations in molecular-beam epitaxially grown GeSi/Si
| DOI | Resolve DOI: https://doi.org/10.1116/1.586730 |
|---|---|
| Author | Search for: ; Search for: ; Search for: ; Search for: |
| Format | Text, Article |
| Publication date | 1993 |
| In | |
| Language | English |
| NRC number | 1159 |
| NPARC number | 8899140 |
| Export citation | Export as RIS |
| Report a correction | Report a correction (opens in a new tab) |
| Record identifier | 1196e1cb-c1cb-473b-b8cd-471648d1601d |
| Record created | 2009-04-22 |
| Record modified | 2020-04-24 |
- Date modified: