The origin of switching noise in GaAs/AlGaAs lateral gated devices

From National Research Council Canada

DOIResolve DOI: https://doi.org/10.1016/j.physe.2006.03.118
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  1. National Research Council of Canada. NRC Institute for Microstructural Sciences
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LanguageEnglish
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NPARC number12744657
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Record identifier14ed46b9-c16b-4129-82e1-f7810baa7545
Record created2009-10-27
Record modified2023-06-23
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