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Force modulation of tunnel gaps in metal oxide memristive nanoswitches

From National Research Council Canada

DOIResolve DOI: https://doi.org/10.1063/1.3227651
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Affiliation
  1. National Research Council Canada. Security and Disruptive Technologies
FormatText, Article
Abstract
Electron tunneling plays a key role in computing devices. Tunneling is, however, notoriously difficult to characterize inside real device structures. Using pressure modulated conductance microscopy, we demonstrate in situ angstrom-scale tuning and estimation of tunnel gaps with ∼10 nm lateral resolution. By modulating tunnel gaps in Pt/TiOx/Pt memristive oxide nanoswitches, we establish that these devices switch via 2–9 Å modification of the tunnel gap.
Publication date
PublisherAIP
In
  • Applied Physics Letters 95, no. 11, 113503.
LanguageEnglish
Peer reviewedYes
NPARC number23004908
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Record identifier16e811c2-be54-41a5-bfd1-64fe12cf3d6c
Record created2019-01-21
Record modified2020-04-16
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