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A comparison of indium migration in the MBE growth of SQW InGaAs/GaAs/AlGaAs lasers on patterned substrates using As2 and As4

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Affiliation
  1. National Research Council of Canada. NRC Institute for Microstructural Sciences
FormatText, Article
Publication date
In
  • 15th IEEE International Semiconductor Laser Conference (October 1996).
LanguageEnglish
NPARC number12327310
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Record identifier198f15a3-3836-44b2-be82-a0c2a94dfff4
Record created2009-09-10
Record modified2020-03-20
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