| Link | http://flux.aps.org/meetings/YR01/MAR01/abs/S3590.html#SJ29.007 |
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| Author | Search for: Grom, G. F.; Search for: Fauchet, P. M.; Search for: Twybeskov, L.; Search for: Labbé, H. J.1; Search for: McCaffrey, J. P.1; Search for: Lockwood, D. J.1; Search for: White Jr., B.; Search for: Deiner, J.; Search for: Kovalev, D.; Search for: Koch, F. |
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| Affiliation | - National Research Council of Canada. NRC Institute for Microstructural Sciences
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| Format | Text, Article |
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| Conference | American Physical Society, Annual March Meeting, 12-16 March 2001, Seattle, Washington, USA |
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| Abstract | The fabrication of size-controlled Si nanocrystals encapsulated by SiO2 is complicated by the amorphous nature of SiO2 and the mismatch in their thermal expansion coefficients. A preferred crystallographic orientation is especially important for Si quantum dots because of the Si indirect-gap band structure and a strong anisotropy in the energy-momentum dispersion. We report self-organization in Si nanocrystals fabricated by the crystallization of nanometer-thick layers of amorphous Si confined between SiO2 layers. Si nanoparticles larger than 8 nm spontaneously form brick-shaped crystallites oriented along the [111] direction. The preferred orientation and distinct shape result in a relatively narrow luminescence. The observed ordering and self-organization is an important step toward reproducible maskless Si nanofabrication and the consequent construction of Si/SiO2 quantum devices. |
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| Publication date | 2001 |
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| In | |
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| Language | English |
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| NPARC number | 12346526 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | 1b3eb9f6-b6ef-44b3-b43c-7b9882bb1ad9 |
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| Record created | 2009-09-17 |
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| Record modified | 2020-03-27 |
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