| Lien | http://flux.aps.org/meetings/YR01/MAR01/abs/S3590.html#SJ29.007 |
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| Auteur | Rechercher : Grom, G. F.; Rechercher : Fauchet, P. M.; Rechercher : Twybeskov, L.; Rechercher : Labbé, H. J.1; Rechercher : McCaffrey, J. P.1; Rechercher : Lockwood, D. J.1; Rechercher : White Jr., B.; Rechercher : Deiner, J.; Rechercher : Kovalev, D.; Rechercher : Koch, F. |
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| Affiliation | - Conseil national de recherches du Canada. Institut des sciences des microstructures du CNRC
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| Format | Texte, Article |
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| Conférence | American Physical Society, Annual March Meeting, 12-16 March 2001, Seattle, Washington, USA |
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| Résumé | The fabrication of size-controlled Si nanocrystals encapsulated by SiO2 is complicated by the amorphous nature of SiO2 and the mismatch in their thermal expansion coefficients. A preferred crystallographic orientation is especially important for Si quantum dots because of the Si indirect-gap band structure and a strong anisotropy in the energy-momentum dispersion. We report self-organization in Si nanocrystals fabricated by the crystallization of nanometer-thick layers of amorphous Si confined between SiO2 layers. Si nanoparticles larger than 8 nm spontaneously form brick-shaped crystallites oriented along the [111] direction. The preferred orientation and distinct shape result in a relatively narrow luminescence. The observed ordering and self-organization is an important step toward reproducible maskless Si nanofabrication and the consequent construction of Si/SiO2 quantum devices. |
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| Date de publication | 2001 |
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| Dans | |
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| Langue | anglais |
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| Numéro NPARC | 12346526 |
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| Exporter la notice | Exporter en format RIS |
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| Signaler une correction | Signaler une correction (s'ouvre dans un nouvel onglet) |
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| Identificateur de l’enregistrement | 1b3eb9f6-b6ef-44b3-b43c-7b9882bb1ad9 |
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| Enregistrement créé | 2009-09-17 |
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| Enregistrement modifié | 2020-03-27 |
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