The Ammonia-MBE Approach for High Electron Mobility in GaN Epilayers and AlGaN/GaN HFETs
The Ammonia-MBE Approach for High Electron Mobility in GaN Epilayers and AlGaN/GaN HFETs
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Affiliation |
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Format | Text, Article |
Conference | 199th ECS Meeting, Washington, D.C., USA |
Publication date | 2001 |
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Series | |
Language | English |
Peer reviewed | Yes |
NPARC number | 12328641 |
Export citation | Export as RIS |
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Record identifier | 21223bc5-b575-4b7a-9d85-9497ccbfcb7b |
Record created | 2009-09-10 |
Record modified | 2020-03-27 |
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