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The Ammonia-MBE Approach for High Electron Mobility in GaN Epilayers and AlGaN/GaN HFETs

From National Research Council Canada

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Affiliation
  1. National Research Council Canada. NRC Institute for Microstructural Sciences
FormatText, Article
Conference199th ECS Meeting, Washington, D.C., USA
Publication date
In
  • III-Nitride Based Semiconductor Electronics and Optical Devices and Thirty-fourth State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXXIV), proceedings of the International Symposia (2001): 19–35.
Series
  • Proceedings (Electrochemical Society) 2001-1.
LanguageEnglish
Peer reviewedYes
NPARC number12328641
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Record identifier21223bc5-b575-4b7a-9d85-9497ccbfcb7b
Record created2009-09-10
Record modified2020-03-27
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