Language selection

Government of Canada / Gouvernement du Canada

Search

Investigations of low-frequency noise of GaN based heterostructure field-effect transistors

From National Research Council Canada

DOIResolve DOI: https://doi.org/10.1049/el:20030548
AuthorSearch for: ; Search for: ; Search for: ; Search for: ; Search for: 1; Search for: ; Search for: 2; Search for: 1
Affiliation
  1. National Research Council of Canada. NRC Institute for Microstructural Sciences
  2. National Research Council of Canada. NRC Steacie Institute for Molecular Sciences
FormatText, Article
Abstract
The low-frequency noise of AlGaN/GaN heterojunction field-effect transistors (HFETs) with different Al fraction of the AlGaN layer was measured and characterised. The DC characteristics of AlGaN/GaN HFETs with higher Al fraction is better. However, the noise performance is poorer owing to the large lattice mismatch with higher Al fraction in the AlGaN layer. The pure flicker noise and lower noise power density can be obtained by the smaller Al fraction in the AlGaN layer of AlGaN/GaN HFETs.
Publication date
In
  • Electronics Letters 39, no. 11 (2003): 877–878.
Peer reviewedYes
NPARC number12744266
Export citationExport as RIS
Report a correctionReport a correction (opens in a new tab)
Record identifier23c94287-d437-4063-99c8-1cc4d9532b21
Record created2009-10-27
Record modified2021-05-10
Date modified: