| Download | - View accepted manuscript: Analysis of dark current mechanisms for split-off band infrared detectors at high temperatures (PDF, 670 KiB)
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| DOI | Resolve DOI: https://doi.org/10.1109/TED.2010.2046065 |
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| Author | Search for: Lao, Y. F.; Search for: Jayaweera, P. V. V.; Search for: Matsik, Steven G.; Search for: Perera, A. G. Unil; Search for: Liu, H. C.1; Search for: Buchanan, M.1; Search for: Wasilewski, Z. R.1 |
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| Affiliation | - National Research Council of Canada. NRC Institute for Microstructural Sciences
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| Format | Text, Article |
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| Subject | dark currents; GaAs–AlGaAs; heterojunctions; infrared detectors |
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| Abstract | An analysis of dark current mechanisms has been performed on high-operating-temperature (140-330K) split-off (SO) band infrared detectors based on p-GaAs/AlGaAs heterojunction structures. In contrast to tunneling and thermionic emission at low temperatures, carrier spreading effects due to drift-diffusion transportation dominate the main source of dark current for SO detectors working at high temperatures. The barrier height of heterojunction plays a critical role in determining a transition temperature for the alternation of dark current channels and operating temperatures of SO detectors. Current spreading effects induce non-uniformity of R0A as measured on devices with different mesa sizes. A theoretical model is used to explain experimental current-voltage curves and optimize device uniformity such as using high doping of p-GaAs region, high barrier height etc. |
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| Publication date | 2010-04-19 |
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| In | |
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| Language | English |
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| Peer reviewed | Yes |
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| NPARC number | 17131330 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | 28f4958e-19a6-418d-aa19-11edfa86ef05 |
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| Record created | 2011-03-26 |
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| Record modified | 2020-04-17 |
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