| Téléchargement | - Voir le manuscrit accepté : Analysis of dark current mechanisms for split-off band infrared detectors at high temperatures (PDF, 670 Kio)
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| DOI | Trouver le DOI : https://doi.org/10.1109/TED.2010.2046065 |
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| Auteur | Rechercher : Lao, Y. F.; Rechercher : Jayaweera, P. V. V.; Rechercher : Matsik, Steven G.; Rechercher : Perera, A. G. Unil; Rechercher : Liu, H. C.1; Rechercher : Buchanan, M.1; Rechercher : Wasilewski, Z. R.1 |
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| Affiliation | - Conseil national de recherches du Canada. Institut des sciences des microstructures du CNRC
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| Format | Texte, Article |
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| Sujet | dark currents; GaAs–AlGaAs; heterojunctions; infrared detectors |
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| Résumé | An analysis of dark current mechanisms has been performed on high-operating-temperature (140-330K) split-off (SO) band infrared detectors based on p-GaAs/AlGaAs heterojunction structures. In contrast to tunneling and thermionic emission at low temperatures, carrier spreading effects due to drift-diffusion transportation dominate the main source of dark current for SO detectors working at high temperatures. The barrier height of heterojunction plays a critical role in determining a transition temperature for the alternation of dark current channels and operating temperatures of SO detectors. Current spreading effects induce non-uniformity of R0A as measured on devices with different mesa sizes. A theoretical model is used to explain experimental current-voltage curves and optimize device uniformity such as using high doping of p-GaAs region, high barrier height etc. |
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| Date de publication | 2010-04-19 |
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| Dans | |
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| Langue | anglais |
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| Publications évaluées par des pairs | Oui |
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| Numéro NPARC | 17131330 |
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| Exporter la notice | Exporter en format RIS |
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| Signaler une correction | Signaler une correction (s'ouvre dans un nouvel onglet) |
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| Identificateur de l’enregistrement | 28f4958e-19a6-418d-aa19-11edfa86ef05 |
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| Enregistrement créé | 2011-03-26 |
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| Enregistrement modifié | 2020-04-17 |
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