| DOI | Resolve DOI: https://doi.org/10.1016/S1350-4495(97)00006-6 |
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| Author | Search for: Shen, W.Z.; Search for: Perera, A.G.U.; Search for: Gamage, S.K.; Search for: Yuan, H.X.; Search for: Liu, H.C.1; Search for: Buchanan, M.1; Search for: Schaff, W.J. |
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| Affiliation | - National Research Council Canada. NRC Institute for Microstructural Sciences
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| Format | Text, Article |
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| Abstract | We report a spectroscopic study of absorption and photoconductivity in GaAs homojunction interfacial workfunction internal photoemission (HIWIP) far-infrared (FIR) detectors utilizing molecular beam epitaxy (MBE) grown multilayer (p+−p−−p+−p−) structures. Strong FIR (50–200 μm) free carrier absorption has been observed and analyzed for a p+ GaAs thin film, revealing the suitability for FIR detection. The basic physical mechanism of free carrier absorption in the HIWIP FIR detectors has been determined to be an acoustic phonon-emission assisted process. A simple recombination model is proposed to account for the bias dependence of the responsivity and the saturation behavior. Using the measured responsivity and dark current data, detectivity (Dλ*) of the FIR detectors has also been estimated. |
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| Publication date | 1997-01-06 |
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| In | |
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| Language | English |
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| Peer reviewed | Yes |
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| NPARC number | 12339182 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | 2a2bf4a7-7c2f-4033-9602-95a52a1b0ce3 |
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| Record created | 2009-09-11 |
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| Record modified | 2020-03-20 |
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