| DOI | Resolve DOI: https://doi.org/10.1117/12.2004310 |
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| Author | Search for: Mnaymneh, K.; Search for: Frédérick, S; Search for: Dalacu, D.1; Search for: Lapointe, J; Search for: Poole, P.J.1; Search for: Williams, R.L.1 |
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| Affiliation | - National Research Council of Canada
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| Format | Text, Article |
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| Conference | Advanced Fabrication Technologies for Micro/Nano Optics and Photonics VI, 5 February 2013 through 6 February 2013, San Francisco, CA |
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| Subject | Compound semiconductors; Critical parts; Optically Active; Photonic circuitry; Photonic crystal membranes; Quantum photonics; Selective area epitaxy; Silicon-on-insulators; Atomic layer deposition; Deposition; Quantum chemistry; Refractive index; Technology; Photonics |
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| Abstract | Normally, the larger refractive index contrast of silicon-on-insulator (SOI) photonics used for transporting highly confined optical modes is not available in compound semiconductor systems because the optically active layer rests upon an epitaxial support layer having a similar refractive index. Here, a semiconductor-under-insulator (SUI) technology for compound semiconductor membrane photonic circuitry is presented. It will be shown that such a technology can facilitate the transport of highly confined optical modes in compound semiconductor systems and is anticipated to be a critical part of future scalable quantum photonics applications. © 2013 Copyright SPIE. |
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| Publication date | 2013 |
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| In | |
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| Series | |
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| Language | English |
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| Peer reviewed | Yes |
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| NPARC number | 21270618 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | 2a2d27b2-5688-4627-8929-55fb6952a2ee |
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| Record created | 2014-02-17 |
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| Record modified | 2020-04-22 |
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