| DOI | Resolve DOI: https://doi.org/10.1063/1.4907326 |
|---|
| Author | Search for: Jiang, Yuchao; Search for: Li, Lu; Search for: Yang, Rui Q.; Search for: Gupta, James A.1; Search for: Aers, Geof C.2; Search for: Dupont, Emmanuel1; Search for: Baribeau, Jean-Marc1; Search for: Wu, Xiaohua1; Search for: Johnson, Matthew B. |
|---|
| Affiliation | - National Research Council of Canada. Information and Communication Technologies
- National Research Council of Canada. Security and Disruptive Technologies
|
|---|
| Format | Text, Article |
|---|
| Subject | Quantum wells; Current density; III-V Semiconductors; Cladding; Laser diodes |
|---|
| Abstract | Interband cascade (IC) lasers have been demonstrated based on type-I InGaAsSb/AlAsSb quantum well (QW) active regions. These type-I IC lasers are composed of 6-cascade stages and InAs/AlSb superlattice cladding layers. In contrast to the use of quinary AlGaInAsSb barriers for active region in previous type-I QW lasers, the type-I QW active region in each stage is sandwiched by digitally graded multiple InAs/AlSb QW electron injector and GaSb/AlSb QW hole injector. The fabricated type-I IC lasers were able to operate in continuous wave and pulsed modes at temperatures up to 306 and 365 K, respectively. The threshold current densities of broad-area lasers were around 300 A/cm2 at 300 K with a lasing wavelength near 3.2 μm. The implications and prospects of these initial results are discussed. |
|---|
| Publication date | 2015-01-30 |
|---|
| In | |
|---|
| Language | English |
|---|
| Peer reviewed | Yes |
|---|
| NPARC number | 21275716 |
|---|
| Export citation | Export as RIS |
|---|
| Report a correction | Report a correction (opens in a new tab) |
|---|
| Record identifier | 2b47033e-12b2-4385-8c82-c3eca524c4b1 |
|---|
| Record created | 2015-07-14 |
|---|
| Record modified | 2020-04-22 |
|---|
