| DOI | Trouver le DOI : https://doi.org/10.1063/1.4907326 |
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| Auteur | Rechercher : Jiang, Yuchao; Rechercher : Li, Lu; Rechercher : Yang, Rui Q.; Rechercher : Gupta, James A.1; Rechercher : Aers, Geof C.2; Rechercher : Dupont, Emmanuel1; Rechercher : Baribeau, Jean-Marc1; Rechercher : Wu, Xiaohua1; Rechercher : Johnson, Matthew B. |
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| Affiliation | - Conseil national de recherches du Canada. Technologies de l'information et des communications
- Conseil national de recherches du Canada. Technologies de sécurité et de rupture
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| Format | Texte, Article |
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| Sujet | Quantum wells; Current density; III-V Semiconductors; Cladding; Laser diodes |
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| Résumé | Interband cascade (IC) lasers have been demonstrated based on type-I InGaAsSb/AlAsSb quantum well (QW) active regions. These type-I IC lasers are composed of 6-cascade stages and InAs/AlSb superlattice cladding layers. In contrast to the use of quinary AlGaInAsSb barriers for active region in previous type-I QW lasers, the type-I QW active region in each stage is sandwiched by digitally graded multiple InAs/AlSb QW electron injector and GaSb/AlSb QW hole injector. The fabricated type-I IC lasers were able to operate in continuous wave and pulsed modes at temperatures up to 306 and 365 K, respectively. The threshold current densities of broad-area lasers were around 300 A/cm2 at 300 K with a lasing wavelength near 3.2 μm. The implications and prospects of these initial results are discussed. |
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| Date de publication | 2015-01-30 |
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| Dans | |
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| Langue | anglais |
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| Publications évaluées par des pairs | Oui |
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| Numéro NPARC | 21275716 |
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| Exporter la notice | Exporter en format RIS |
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| Signaler une correction | Signaler une correction (s'ouvre dans un nouvel onglet) |
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| Identificateur de l’enregistrement | 2b47033e-12b2-4385-8c82-c3eca524c4b1 |
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| Enregistrement créé | 2015-07-14 |
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| Enregistrement modifié | 2020-04-22 |
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