Crystallinity, order, the thin-film silicon continuum, and the spectral dependence of the refractive index in thin silicon films grown through ultra-high-vacuum evaporation for a range of growth temperatures

DOI	Resolve DOI: https://doi.org/10.1016/j.jnoncrysol.2021.120657
Author	Search for: Moghaddam, Saeed; Search for: Tay, Li-Lin¹; Search for: Noël, Mario¹; Search for: Zwinkels, Joanne C.¹; Search for: Baribeau, Jean-Marc²; Search for: Lockwood, David J.¹; Search for: O’Leary, Stephen K.
Affiliation	National Research Council Canada. Metrology Research Centre National Research Council Canada. Advanced Electronics and Photonics
Funder	Search for: Mitacs; Search for: Natural Sciences and Engineering Research Council of Canada
Format	Text, Article
Subject	crystallinity; order; thin-film silicon continuum; ultra-high-vacuum evaporation; growth temperature
Abstract	Using ultra-high-vacuum evaporation, thin-films of silicon were grown. This paper starts with a placement of our thin-films into the overall thin-film silicon continuum. Then, our thin-film’s Raman spectra are examined. In particular, two short-range order Raman related measures, namely the breadth and position of the Raman spectrum’s transverse-optic-peak, and an intermediate-range order Raman related measure, namely the ratio of the integrated transverse-acoustic and transverse-optic-peak intensities, are plotted as functions of the growth temperature. We then correlate these changes found in the nature of the order found within our thin-films of silicon with the changes observed in the spectral dependence of the refractive index, focusing on the maximum of the refractive index over the spectral range under consideration in this analysis. We find that the maximum of the refractive index increases in response to increased ordering. Finally, the potential device implications of these results are explored.
Publication date	2021-02-26
Publisher	Elsevier
In	Journal of Non-Crystalline Solids 559, no. C, 120657 (1 May 2021).
Language	English
Peer reviewed	Yes
Identifier	S0022309321000168
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Record identifier	2bdfbbe9-fd4f-4cf6-893c-ab85c6524202
Record created	2023-01-09
Record modified	2023-01-09

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Date modified:: 2026-03-08