| DOI | Resolve DOI: https://doi.org/10.1016/0039-6028(96)00573-0 |
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| Author | Search for: Pudalov, V. M.; Search for: D'Iorio, M.1; Search for: Campbell, J. W. |
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| Affiliation | - National Research Council Canada. NRC Institute for Microstructural Sciences
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| Format | Text, Article |
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| Subject | Electrical transport; Electrical transport measurements; Metal-oxide-semiconductor (MOS) structures; Semiconductor-insulator interfaces; Silicon |
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| Abstract | Threshold conduction was studied in Si MOSFET samples with mobility ranging from 5000 to 55 000 cm2/V · s, and in the wide temperature range 20 mK-4 K. We found that non-ohmic conduction is qualitatively different in low and high mobility samples near and far from the critical density. In the high mobility samples we observed a novel feature, in that the differential resistance changes sign slightly above the threshold. |
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| Publication date | 1996-07-20 |
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| In | |
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| NPARC number | 12327892 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | 2c06274e-a252-400b-9d95-5c37a4efb622 |
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| Record created | 2009-09-10 |
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| Record modified | 2020-03-20 |
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