| DOI | Trouver le DOI : https://doi.org/10.1016/0039-6028(96)00573-0 |
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| Auteur | Rechercher : Pudalov, V. M.; Rechercher : D'Iorio, M.1; Rechercher : Campbell, J. W. |
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| Affiliation | - Conseil national de recherches Canada. Institut des sciences des microstructures du CNRC
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| Format | Texte, Article |
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| Sujet | Electrical transport; Electrical transport measurements; Metal-oxide-semiconductor (MOS) structures; Semiconductor-insulator interfaces; Silicon |
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| Résumé | Threshold conduction was studied in Si MOSFET samples with mobility ranging from 5000 to 55 000 cm2/V · s, and in the wide temperature range 20 mK-4 K. We found that non-ohmic conduction is qualitatively different in low and high mobility samples near and far from the critical density. In the high mobility samples we observed a novel feature, in that the differential resistance changes sign slightly above the threshold. |
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| Date de publication | 1996-07-20 |
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| Dans | |
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| Numéro NPARC | 12327892 |
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| Exporter la notice | Exporter en format RIS |
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| Signaler une correction | Signaler une correction (s'ouvre dans un nouvel onglet) |
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| Identificateur de l’enregistrement | 2c06274e-a252-400b-9d95-5c37a4efb622 |
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| Enregistrement créé | 2009-09-10 |
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| Enregistrement modifié | 2020-03-20 |
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