Transport properties of gated sub-micron mesas incorporating InAs self-assembled dots that conduct near zero bias
Transport properties of gated sub-micron mesas incorporating InAs self-assembled dots that conduct near zero bias
| DOI | Resolve DOI: https://doi.org/10.1016/j.physe.2004.08.085 |
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| Author | Search for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for: |
| Format | Text, Article |
| Publication date | 2005 |
| In | |
| Language | English |
| Peer reviewed | Yes |
| NPARC number | 12744187 |
| Export citation | Export as RIS |
| Report a correction | Report a correction (opens in a new tab) |
| Record identifier | 2f6ad93e-a10e-4b30-9b97-68430c8081e9 |
| Record created | 2009-10-27 |
| Record modified | 2023-06-23 |
- Date modified: