Effect of growth temperature on photoluminescence from ion-beam-doped molecular beam epitaxial Si:As
Effect of growth temperature on photoluminescence from ion-beam-doped molecular beam epitaxial Si:As
DOI | Resolve DOI: https://doi.org/10.1016/0040-6090(90)90399-X |
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Author | Search for: ; Search for: ; Search for: ; Search for: |
Format | Text, Article |
Publication date | 1990 |
In | |
Language | English |
NRC number | NRC-INMS-1117 |
NPARC number | 8897009 |
Export citation | Export as RIS |
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Record identifier | 38544757-f9ff-4643-92d0-fbe43bcbebb2 |
Record created | 2009-04-22 |
Record modified | 2020-03-17 |
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