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Growth and characterization of UHV-CD Si/SiGe strained-layer superlattices on bulk crystal SiGe substrates

From National Research Council Canada

DOIResolve DOI: https://doi.org/10.1557/PROC-686-A3.6
AuthorSearch for: 1; Search for: ; Search for: 1; Search for: 2
Affiliation
  1. National Research Council of Canada. NRC Institute for Microstructural Sciences
  2. National Research Council of Canada. NRC Institute for National Measurement Standards
FormatText, Article
Conference2001 MRS Fall Meeting: Symposium A: Materials issues in novel Si-based technology, 26-28 November 2001, Boston, Massachusetts, USA
Abstract
High-quality short-period Si/SiGe strained-layer superlattices have been grown on bulk single-crystal SiGe substrates using a commercial low-temperature ultrahigh vacuum chemical vapor deposition (UHV/CVD) reactor. These superlattices were characterized by high-resolution x-ray diffraction (HRXRD), Auger electron spectroscopy (AES), atomic force microscopy (AFM), cross-sectional transmission electron microscopy (XTEM) and photoluminescence (PL). HRXRD, AES, and XTEM results confirm that the materials deposited are high crystal-quality superlattice layers with abrupt interfaces and excellent thickness and composition uniformity across superlattices of 5 periods. AFM images show similar surface RMS roughness of much less than 1 nm for both the top layer surface and the starting substrate surface, indicating very smooth surfaces. PL measurements further confirm material quality and composition, and show sharp, well-resolved near band-edge BE and FE PL and strong broad sub-gap PL perhaps related to direct-gap superlattice transitions. The materials grown here are very promising for applications of both high-speed electronic devices and high-efficiency optoelectronic devices.
Publication date
In
  • Materials issues in novel Si-based technology: symposium held November 26-28, 2001, Boston, Massachusetts, U.S.A. (2002).
Series
  • Materials Research Society Symposia Proceedings, no. 686.
LanguageEnglish
Peer reviewedYes
NRC numberNRC-INMS-1375
NPARC number12346271
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Record identifier3b6e551a-d09c-44f3-8124-28305afa27b1
Record created2009-09-17
Record modified2020-03-30
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