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Growth and characterization of UHV-CD Si/SiGe strained-layer superlattices on bulk crystal SiGe substrates

Par Conseil national de recherches du Canada

DOITrouver le DOI : https://doi.org/10.1557/PROC-686-A3.6
AuteurRechercher : 1; Rechercher : ; Rechercher : 1; Rechercher : 2
Affiliation
  1. Conseil national de recherches du Canada. Institut des sciences des microstructures du CNRC
  2. Conseil national de recherches du Canada. Institut des étalons nationaux de mesure du CNRC
FormatTexte, Article
Conférence2001 MRS Fall Meeting: Symposium A: Materials issues in novel Si-based technology, 26-28 November 2001, Boston, Massachusetts, USA
Résumé
High-quality short-period Si/SiGe strained-layer superlattices have been grown on bulk single-crystal SiGe substrates using a commercial low-temperature ultrahigh vacuum chemical vapor deposition (UHV/CVD) reactor. These superlattices were characterized by high-resolution x-ray diffraction (HRXRD), Auger electron spectroscopy (AES), atomic force microscopy (AFM), cross-sectional transmission electron microscopy (XTEM) and photoluminescence (PL). HRXRD, AES, and XTEM results confirm that the materials deposited are high crystal-quality superlattice layers with abrupt interfaces and excellent thickness and composition uniformity across superlattices of 5 periods. AFM images show similar surface RMS roughness of much less than 1 nm for both the top layer surface and the starting substrate surface, indicating very smooth surfaces. PL measurements further confirm material quality and composition, and show sharp, well-resolved near band-edge BE and FE PL and strong broad sub-gap PL perhaps related to direct-gap superlattice transitions. The materials grown here are very promising for applications of both high-speed electronic devices and high-efficiency optoelectronic devices.
Date de publication
Dans
  • Materials issues in novel Si-based technology: symposium held November 26-28, 2001, Boston, Massachusetts, U.S.A. (2002).
Série
  • Materials Research Society Symposia Proceedings, nº 686.
Langueanglais
Publications évaluées par des pairsOui
Numéro du CNRCNRC-INMS-1375
Numéro NPARC12346271
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Identificateur de l’enregistrement3b6e551a-d09c-44f3-8124-28305afa27b1
Enregistrement créé2009-09-17
Enregistrement modifié2020-03-30
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