| DOI | Resolve DOI: https://doi.org/10.1557/PROC-744-M9.3 |
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| Author | Search for: Rowell, N. L.1; Search for: Lockwood, D. J.2; Search for: Poole, P. J.2; Search for: Yu, G.1 |
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| Affiliation | - National Research Council Canada. NRC Institute for National Measurement Standards
- National Research Council Canada. NRC Institute for Microstructural Sciences
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| Sponsor | Search for: MRS |
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| Format | Text, Article |
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| Conference | 2002 MRS Fall Meeting: Symposium M: Progress in semiconductors II : electronic and optoelectronic applications, 2-5 December 2002, Boston, Massachusetts, USA |
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| Abstract | Polarized far infrared reflectance was measured at oblique incidence for In0.53Ga0.47As / InP multiple quantum wells grown by chemical beam epitaxy on InP(100) wafers. Both the well thickness (0.25 - 20 nm) and number of periods (10 - 40) were varied. The reflectance spectra contained sharp Berreman modes at the frequencies of the transverse (TO) and longitudinal (LO) optical phonons. The contributions of the individual phonons were resolved with the model fits. Interface layer phonon modes were observed with intensity increasing with number of wells. The interface layers were 0.6 nm thick and of different composition to adjoining wells consistent with cross-sectional scanning tunneling microscope results on the same samples. The variation due to phonon confinement of the InAs- and GaAs-like LO and TO phonon frequencies was obtained. |
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| Language | English |
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| Peer reviewed | Yes |
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| NRC number | NRC-INMS-357
NRCC 42781 |
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| NPARC number | 8899685 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | 3d39b10b-72b6-49f0-90ca-452842f671dc |
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| Record created | 2009-04-22 |
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| Record modified | 2020-04-16 |
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