Far infrared spectroscopy of In0.53Ga0.47As quantum wells on InP(100)

Par Conseil national de recherches du Canada

DOI	Trouver le DOI : https://doi.org/10.1557/PROC-744-M9.3
Auteur	Rechercher : Rowell, N. L.¹; Rechercher : Lockwood, D. J.²; Rechercher : Poole, P. J.²; Rechercher : Yu, G.¹
Affiliation	Conseil national de recherches du Canada. Institut des étalons nationaux de mesure du CNRC Conseil national de recherches du Canada. Institut des sciences des microstructures du CNRC
Commanditaire	Rechercher : MRS
Format	Texte, Article
Conférence	2002 MRS Fall Meeting: Symposium M: Progress in semiconductors II : electronic and optoelectronic applications, 2-5 December 2002, Boston, Massachusetts, USA
Résumé	Polarized far infrared reflectance was measured at oblique incidence for In0.53Ga0.47As / InP multiple quantum wells grown by chemical beam epitaxy on InP(100) wafers. Both the well thickness (0.25 - 20 nm) and number of periods (10 - 40) were varied. The reflectance spectra contained sharp Berreman modes at the frequencies of the transverse (TO) and longitudinal (LO) optical phonons. The contributions of the individual phonons were resolved with the model fits. Interface layer phonon modes were observed with intensity increasing with number of wells. The interface layers were 0.6 nm thick and of different composition to adjoining wells consistent with cross-sectional scanning tunneling microscope results on the same samples. The variation due to phonon confinement of the InAs- and GaAs-like LO and TO phonon frequencies was obtained.
Dans	2002 MRS Fall Meeting - Symposium M – Progress in Semiconductors II–Electronic and Optoelectronic Applications, M9.3 : 583–588.
Série	Materials Research Society Symposia Proceedings, nº 744.
Langue	anglais
Publications évaluées par des pairs	Oui
Numéro du CNRC	NRC-INMS-357 NRCC 42781
Numéro NPARC	8899685
Exporter la notice	Exporter en format RIS
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Identificateur de l’enregistrement	3d39b10b-72b6-49f0-90ca-452842f671dc
Enregistrement créé	2009-04-22
Enregistrement modifié	2020-04-16

Date de modification :: 2024-07-01