Effects of surface cleaning and treatments in 2-DEG characteristics of GaN HEMT devices

From National Research Council Canada

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Affiliation
  1. National Research Council of Canada. NRC Institute for Microstructural Sciences
FormatText, Article
Conference31th Workshop on Integrated circuits and Semiconductors, 2007
NPARC number12346516
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Record identifier3ec17a75-da76-4c58-95cf-faa14c3a453f
Record created2009-09-17
Record modified2020-04-16
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