| DOI | Resolve DOI: https://doi.org/10.1117/12.162783 |
|---|
| Author | Search for: Liu, H. C.1; Search for: Steele, A. G.1; Search for: Wasilewski, Z. R.1; Search for: Buchanan, M.1 |
|---|
| Affiliation | - National Research Council of Canada. NRC Institute for Microstructural Sciences
|
|---|
| Sponsor | Search for: SPIE |
|---|
| Format | Text, Article |
|---|
| Conference | Physical Concepts and Materials for Novel Optoelectronic Device Applications II : International Symposium, May 24, 1993, Trieste, Italy |
|---|
| Abstract | Recent research activity in the long wavelength infrared spectral region has been driven by the wide range of possible applications for optoelectronic systems and by the wealth of new physical phenomena displayed by quantum well intersubband-based devices. GaAs-AlGaAs quantum well intersubband photodetectors are currently under intense research investigation, and promise to have a wide range of application. Here we first present a microscopic model of the detector dark current, which provides new physical insights into the mechanism of carrier transport in multiple quantum well structures. Systematic experiments have been carried out to compare with the model, and good agreement between theory and experiments is obtained. The model is based on considering the details of the carrier trapping and emission from quantum wells. |
|---|
| Publication date | 1993 |
|---|
| In | |
|---|
| Series | |
|---|
| Language | English |
|---|
| NRC number | 764 |
|---|
| NPARC number | 5763231 |
|---|
| Export citation | Export as RIS |
|---|
| Report a correction | Report a correction (opens in a new tab) |
|---|
| Record identifier | 3f47e156-f84e-4e6d-95ae-34884da33036 |
|---|
| Record created | 2009-03-29 |
|---|
| Record modified | 2020-04-24 |
|---|
