| DOI | Trouver le DOI : https://doi.org/10.1117/12.162783 |
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| Auteur | Rechercher : Liu, H. C.1; Rechercher : Steele, A. G.1; Rechercher : Wasilewski, Z. R.1; Rechercher : Buchanan, M.1 |
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| Affiliation du nom | - Conseil national de recherches du Canada. Institut des sciences des microstructures du CNRC
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| Commanditaire | Rechercher : SPIE |
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| Format | Texte, Article |
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| Conférence | Physical Concepts and Materials for Novel Optoelectronic Device Applications II : International Symposium, May 24, 1993, Trieste, Italy |
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| Résumé | Recent research activity in the long wavelength infrared spectral region has been driven by the wide range of possible applications for optoelectronic systems and by the wealth of new physical phenomena displayed by quantum well intersubband-based devices. GaAs-AlGaAs quantum well intersubband photodetectors are currently under intense research investigation, and promise to have a wide range of application. Here we first present a microscopic model of the detector dark current, which provides new physical insights into the mechanism of carrier transport in multiple quantum well structures. Systematic experiments have been carried out to compare with the model, and good agreement between theory and experiments is obtained. The model is based on considering the details of the carrier trapping and emission from quantum wells. |
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| Date de publication | 1993 |
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| Dans | |
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| Série | |
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| Langue | anglais |
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| Numéro du CNRC | 764 |
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| Numéro NPARC | 5763231 |
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| Exporter la notice | Exporter en format RIS |
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| Signaler une correction | Signaler une correction (s'ouvre dans un nouvel onglet) |
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| Identificateur de l’enregistrement | 3f47e156-f84e-4e6d-95ae-34884da33036 |
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| Enregistrement créé | 2009-03-29 |
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| Enregistrement modifié | 2020-04-24 |
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