| DOI | Resolve DOI: https://doi.org/10.1016/0038-1098(91)90363-Z |
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| Author | Search for: Williams, R.L.1; Search for: Coleridge, P.2; Search for: Wasilewski, Z.R.1; Search for: Dion, M.1; Search for: Sachrajda, A.2; Search for: Rolfe, S.1 |
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| Affiliation | - National Research Council of Canada
- National Research Council of Canada. NRC Institute for Microstructural Sciences
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| Format | Text, Article |
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| Subject | crystals, epitaxial growth; electrons, transport properties; magnetic fields, applications; molecular beam epitaxy, applications; semiconducting gallium arsenide, growth; heteroepitaxial semiconducting compounds; magnetotransport measurements; silicon atomic plane doping; suspended growth doping technique; semiconducting indium compounds |
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| Abstract | We examine the electronic transport properties of a sheet of silicon donors introduced during the molecular beam epitaxial growth of InAs/GaAs, using the suspended growth doping technique. Layers are characterised by magnetotransport measurements in magnetic fields applied parallel and perpendicular to the sample surface. © 1991. |
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| Publication date | 1991 |
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| In | |
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| Language | English |
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| Peer reviewed | Yes |
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| NPARC number | 21274626 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | 4052bcaa-3d17-40c7-a7b7-2eafc28f9994 |
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| Record created | 2015-03-18 |
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| Record modified | 2020-03-17 |
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