| Download | - View author's version: Laser compatible waveguide electroabsorption modulator with high contrast and low operating voltage in GaAs/AlGaAs (PDF, 16.2 MiB)
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| DOI | Resolve DOI: https://doi.org/10.1109/68.87941 |
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| Author | Search for: Moss, D.1; Search for: Landheer, D.1; Search for: Delage, A.1; Search for: Chatenoud, F.1; Search for: Dion, M.1 |
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| Affiliation | - National Research Council of Canada. NRC Institute for Microstructural Sciences
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| Format | Text, Article |
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| Abstract | The authors demonstrate a SQW-GRINSCH ridge-waveguide electroabsorption modulator in GaAs/Al/sub x/Ga/sub 1-x/As that has a very high contrast ratio and low operating voltage and also acts as a laser with relatively low threshold current. They achieve contrast ratios of 10 dB/100 mu m of cavity length with an operating voltage of less than -4 V. In addition, when operated as laser, the device exhibits a threshold current of 25 mA. The active layer has a capacitance of 205 pF/mm/sup 2/ which would allow the fabrication of a device with a modulation bandwidth of over 20 GHz. The laser operated at a wavelength only 2-3 nm shorter than the optimum modulation wavelength. |
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| Publication date | 1991-07 |
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| Publisher | IEEE |
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| In | |
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| Language | English |
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| Peer reviewed | Yes |
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| NPARC number | 23003873 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | 425f1596-3224-449f-8688-c0bb3b0a03ba |
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| Record created | 2018-08-17 |
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| Record modified | 2020-03-17 |
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