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Extremely low threshold current strained InGaAs/AlGaAs lasers by molecular beam epitaxy

From National Research Council Canada

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DOIResolve DOI: https://doi.org/10.1063/1.105098
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Affiliation
  1. National Research Council of Canada. NRC Institute for Microstructural Sciences
FormatText, Article
Abstract
Using solid source molecular beam epitaxy we have grown strained layer InGaAs/AlGaAs graded index separate confinement heterostructure lasers operating at 1.01 μm. For broad‐area, uncoated Fabry–Perot devices with cavity lengths in excess of 3000 μm, the threshold current density is 56 A/cm2, a value which we believe to be the lowest ever reported for laser diodes in any materials system. The internal quantum efficiency for these lasers is 88%, while the materials losses are 1.8 cm−1.
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PublisherAIP Publishing
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  • Applied Physics Letters 58, no. 17: 1816–1818.
LanguageEnglish
Peer reviewedYes
NPARC number23003875
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Record identifier42c5a124-554e-4a83-87dd-3de7bd7adb30
Record created2018-08-17
Record modified2020-03-17
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