Minority carrier diffusion lengths and mobilities in low-doped n-InGaAs for focal plane array applications

From National Research Council Canada

DOIResolve DOI: https://doi.org/10.1117/12.2258616
AuthorSearch for: 1 ; Search for: 1 
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  1. National Research Council Canada. Information and Communication Technologies
FormatText
TypeArticle
Proceedings titleInfrared Technology and Applications XLIII
Series titleProceedings of SPIE; no. 10177
ConferenceInfrared Technology and Applications XLIII, 9-13 April 2017, Anaheim, CA, USA
ISSN0277-786X
1996-756X
ISBN9781510608559
Pages# of pages: 9
SubjectInGaAs; SWIR; minority carrier diffusion length; mobility; lifetime; doping dependence; modeling and simulation; dark current; pixel pitch
Abstract
The hole diffusion length in n-InGaAs is extracted for two samples of different doping concentrations using a set of long and thin diffused junction diodes separated by various distances on the order of the diffusion length. The methodology is described, including the ensuing analysis which yields diffusion lengths between 70 - 85 um at room temperature for doping concentrations in the range of 5 - 9 x 10^15 cm-3. The analysis also provides insight into the minority carrier mobility which is a parameter not commonly reported in the literature. Hole mobilities on the order of 500 - 750 cm2/Vs are reported for the aforementioned doping range, which are comparable albeit longer than the majority hole mobility for the same doping magnitude in p-InGaAs. A radiative recombination coefficient of (0.5-0.2)x10^-10 cm^-3s^-1 is also extracted from the ensuing analysis for an InGaAs thickness of 2.7 um. Preliminary evidence is also given for both heavy and light hole diffusion. The dark current of InP/InGaAs p-i-n photodetectors with 25 and 15 um pitches are then calibrated to device simulations and correlated to the extracted diffusion lengths and doping concentrations. An effective Shockley-Read-Hall lifetime of between 90-200 us provides the best fit to the dark current of these structures.
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PublisherSociety of Photo-optical Instrumentation Engineers
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LanguageEnglish
Peer reviewedYes
NPARC number23002213
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