Minority carrier diffusion lengths and mobilities in low-doped n-InGaAs for focal plane array applications
Minority carrier diffusion lengths and mobilities in low-doped n-InGaAs for focal plane array applications
DOI | Resolve DOI: https://doi.org/10.1117/12.2258616 |
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Author | Search for: Walker, Alexandre W.1; Search for: Denhoff, Mike W.1 |
Name affiliation |
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Format | Text, Article |
Proceedings title | Infrared Technology and Applications XLIII |
Series title | Proceedings of SPIE; no. 10177 |
Conference | Infrared Technology and Applications XLIII, 9-13 April 2017, Anaheim, CA, USA |
ISSN | 0277-786X 1996-756X |
ISBN | 9781510608559 |
Pages | # of pages: 9 |
Subject | InGaAs; SWIR; minority carrier diffusion length; mobility; lifetime; doping dependence; modeling and simulation; dark current; pixel pitch |
Abstract | |
Publication date | 2017-05-03 |
Publisher | Society of Photo-optical Instrumentation Engineers |
Other format | |
Language | English |
Peer reviewed | Yes |
NPARC number | 23002213 |
Export citation | Export as RIS |
Report a correction | Report a correction | Record identifier | 455842fb-15b9-482b-b084-5b0026431a2d |
Record created | 2017-09-06 |
Record modified | 2020-03-16 |