Minority carrier diffusion lengths and mobilities in low-doped n-InGaAs for focal plane array applications

From National Research Council Canada

DOIResolve DOI: https://doi.org/10.1117/12.2258616
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  1. National Research Council of Canada. Information and Communication Technologies
FormatText, Article
ConferenceInfrared Technology and Applications XLIII, 9-13 April 2017, Anaheim, CA, USA
SubjectInGaAs; SWIR; minority carrier diffusion length; mobility; lifetime; doping dependence; modeling and simulation; dark current; pixel pitch
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PublisherSociety of Photo-optical Instrumentation Engineers
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LanguageEnglish
Peer reviewedYes
NPARC number23002213
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Record identifier455842fb-15b9-482b-b084-5b0026431a2d
Record created2017-09-06
Record modified2020-03-16
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