| DOI | Resolve DOI: https://doi.org/10.1557/PROC-743-L9.11 |
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| Author | Search for: Fan, Z. Y.; Search for: Li, J.; Search for: Lin, J. Y.; Search for: Jiang, H. X.; Search for: Liu, Y.1; Search for: Bardwell, J. A.1; Search for: Webb, J. B.1; Search for: Tang, H.1 |
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| Affiliation | - National Research Council of Canada. NRC Institute for Microstructural Sciences
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| Format | Text, Article |
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| Conference | 2002 MRS Fall Meeting: Symposium L: GaN and Related Alloys |
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| Abstract | The fabrication and characterization of AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors (MOSHFETs) with the δ-doped barrier are reported. The incorporation of the SiO2 insulated-gate and the δ-doped barrier into HFET structures reduces the gate leakage and improves the 2D channel carrier mobility. The device has a high drain-current-driving and gate-control capabilities as well as a very high gate-drain breakdown voltage of 200 V, a cutoff frequency of 15 GHz and a maximum frequency of oscillation of 34 GHz for a gate length of 1 μm. These characteristics indicate a great potential of this structure for high-power-microwave applications. |
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| Publication date | 2003 |
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| Peer reviewed | Yes |
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| NPARC number | 12328958 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | 4727338e-ebf5-4417-b0d4-e40cd685ed1c |
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| Record created | 2009-09-10 |
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| Record modified | 2020-04-02 |
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