| DOI | Resolve DOI: https://doi.org/10.1016/0039-6028(96)00462-1 |
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| Author | Search for: Fletcher, R.; Search for: Coleridge, P. T.1; Search for: Feng, Y.1 |
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| Affiliation | - National Research Council of Canada. NRC Institute for Microstructural Sciences
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| Format | Text, Article |
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| Subject | thermomagnetic; thermopower |
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| Abstract | Oscillations in the diffusion thermopower of a GaAs/Ga1-xAlxAs heterojunction have been clearly observed for the first time. Phonon drag has been strongly reduced by growing the 2DEG on a heavily-doped conducting substrate and by working below 1 K. The low-field oscillations in the Nernst-Ettingshausen coefficient have been investigated and are found to show the unique thermal damping factor of diffusion. |
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| Publication date | 1996-07-20 |
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| In | |
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| NPARC number | 12327169 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | 5342763d-c182-40f0-8ae7-ea94d725716b |
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| Record created | 2009-09-10 |
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| Record modified | 2020-03-20 |
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