Contactless electroreflectance of GaN0.025As0.975-xSbx/GaAs quantum wells with high Sb content (0.27 <= x <= 0.33): the determination of band gap discontinuity

From National Research Council Canada

Download
  1. (PDF, 696 KiB)
DOIResolve DOI: https://doi.org/10.1063/1.2370506
AuthorSearch for: ; Search for: 1; Search for: 1
Affiliation
  1. National Research Council of Canada. NRC Institute for Microstructural Sciences
FormatText, Article
Abstract
Publication date
In
LanguageEnglish
Peer reviewedYes
NPARC number21276876
Export citationExport as RIS
Report a correctionReport a correction (opens in a new tab)
Record identifier53e70342-b7f1-4f93-ab24-d8c3daa480a6
Record created2015-10-29
Record modified2020-06-04
Date modified: