| Téléchargement | - Voir le manuscrit accepté : Contactless electroreflectance of GaN0.025As0.975-xSbx/GaAs quantum wells with high Sb content (0.27 <= x <= 0.33): the determination of band gap discontinuity (PDF, 696 Kio)
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| DOI | Trouver le DOI : https://doi.org/10.1063/1.2370506 |
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| Auteur | Rechercher : Kudrawiec, R.; Rechercher : Gupta, J. A.1; Rechercher : Wu, X.1 |
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| Affiliation | - Conseil national de recherches du Canada. Institut des sciences des microstructures du CNRC
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| Format | Texte, Article |
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| Résumé | GaN0.025As0.975−xSbx /GaAs quantum wells QWs with x=0.27 and x=0.33 were investigated by contactless electroreflectance CER spectroscopy. CER features related to optical transitions between the ground and excited states were clearly observed, indicating that these QWs have type-I structures. By matching the QW transition energies with those obtained from theoretical calculations performed within the electron effective mass approximation the conduction band offset in these QWs is found to be close to 40%. The resulting conduction band discontinuities were found to be ~200 and ~150 meV for the QWs with x=0.27 and x=0.33, respectively. |
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| Date de publication | 2006 |
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| Dans | |
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| Langue | anglais |
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| Publications évaluées par des pairs | Oui |
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| Numéro NPARC | 21276876 |
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| Exporter la notice | Exporter en format RIS |
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| Signaler une correction | Signaler une correction (s'ouvre dans un nouvel onglet) |
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| Identificateur de l’enregistrement | 53e70342-b7f1-4f93-ab24-d8c3daa480a6 |
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| Enregistrement créé | 2015-10-29 |
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| Enregistrement modifié | 2020-06-04 |
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