Growth optimisation of the GaN layers and GaN/AlGaN heterojunctions on bulk GaN substrates using plasma-assisted molecular beam epitaxy
Growth optimisation of the GaN layers and GaN/AlGaN heterojunctions on bulk GaN substrates using plasma-assisted molecular beam epitaxy
| DOI | Resolve DOI: https://doi.org/10.1002/pssa.200303961 |
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| Author | Search for: ; Search for: 1; Search for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for: |
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| Format | Text, Article |
| Publication date | 2004 |
| Publisher | Wiley |
| In | |
| Language | English |
| Peer reviewed | Yes |
| NPARC number | 12743976 |
| Export citation | Export as RIS |
| Report a correction | Report a correction (opens in a new tab) |
| Record identifier | 54f27f24-fde5-4ed3-9616-bd046b4d7631 |
| Record created | 2009-10-27 |
| Record modified | 2020-04-17 |
- Date modified: