| Download | - View final version: Holes outperform electrons in group IV semiconductor materials (PDF, 1.7 MiB)
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| DOI | Resolve DOI: https://doi.org/10.1002/smsc.202200094 |
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| Author | Search for: Myronov, MaksymORCID identifier: https://orcid.org/0000-0001-7757-2187; Search for: Kycia, Jan; Search for: Waldron, Philip1; Search for: Jiang, Weihong1; Search for: Barrios, Pedro1; Search for: Bogan, Alex1; Search for: Coleridge, Peter1; Search for: Studenikin, Sergei1 |
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| Affiliation | - National Research Council of Canada. Security and Disruptive Technologies
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| Format | Text, Article |
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| Subject | 2D hole gases; germanium; mobility; quantum materials; semiconductors; spin orbit interaction |
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| Abstract | A record-high mobility of holes, reaching 4.3 × 10⁶ cm² V⁻¹s⁻¹ at 300 mK in an epitaxial strained germanium (s-Ge) semiconductor, grown on a standard silicon wafer, is reported. This major breakthrough is achieved due to the development of state-of-the-art epitaxial growth technology culminating in superior monocrystalline quality of the s-Ge material platform with a very low density of background impurities and other imperfections. As a consequence, the hole mobility in s-Ge appears to be ≈2 times higher than the highest electron mobility in strained silicon. In addition to the record mobility, this material platform reveals a unique combination of properties, which are a very large and tuneable effective g*-factor (>18), a very low percolation density (5 × 10⁹ cm⁻²) and a small effective mass (0.054 m₀). This long-sought combination of parameters in one material system is important for the research and development of low-temperature electronics with reduced Joule heating and for quantum-electronics circuits based on spin qubits. |
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| Publication date | 2023-03-02 |
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| Publisher | Wiley |
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| Licence | |
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| Language | English |
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| Peer reviewed | Yes |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | 59632a40-e112-4651-bcc7-9e0bc3fb80f8 |
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| Record created | 2023-05-04 |
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| Record modified | 2023-05-11 |
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