Téléchargement | - Voir la version finale : Holes outperform electrons in group IV semiconductor materials (PDF, 1.7 Mio)
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DOI | Trouver le DOI : https://doi.org/10.1002/smsc.202200094 |
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Auteur | Rechercher : Myronov, MaksymIdentifiant ORCID : https://orcid.org/0000-0001-7757-2187; Rechercher : Kycia, Jan; Rechercher : Waldron, Philip1; Rechercher : Jiang, Weihong1; Rechercher : Barrios, Pedro1; Rechercher : Bogan, Alex1; Rechercher : Coleridge, Peter1; Rechercher : Studenikin, Sergei1 |
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Affiliation | - Conseil national de recherches du Canada. Technologies de sécurité et de rupture
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Format | Texte, Article |
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Sujet | 2D hole gases; germanium; mobility; quantum materials; semiconductors; spin orbit interaction |
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Résumé | A record-high mobility of holes, reaching 4.3 × 10⁶ cm² V⁻¹s⁻¹ at 300 mK in an epitaxial strained germanium (s-Ge) semiconductor, grown on a standard silicon wafer, is reported. This major breakthrough is achieved due to the development of state-of-the-art epitaxial growth technology culminating in superior monocrystalline quality of the s-Ge material platform with a very low density of background impurities and other imperfections. As a consequence, the hole mobility in s-Ge appears to be ≈2 times higher than the highest electron mobility in strained silicon. In addition to the record mobility, this material platform reveals a unique combination of properties, which are a very large and tuneable effective g*-factor (>18), a very low percolation density (5 × 10⁹ cm⁻²) and a small effective mass (0.054 m₀). This long-sought combination of parameters in one material system is important for the research and development of low-temperature electronics with reduced Joule heating and for quantum-electronics circuits based on spin qubits. |
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Date de publication | 2023-03-02 |
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Maison d’édition | Wiley |
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Licence | |
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Dans | |
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Langue | anglais |
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Publications évaluées par des pairs | Oui |
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Exporter la notice | Exporter en format RIS |
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Signaler une correction | Signaler une correction (s'ouvre dans un nouvel onglet) |
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Identificateur de l’enregistrement | 59632a40-e112-4651-bcc7-9e0bc3fb80f8 |
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Enregistrement créé | 2023-05-04 |
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Enregistrement modifié | 2023-05-11 |
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