| DOI | Resolve DOI: https://doi.org/10.1088/1361-6641/abecab |
|---|
| Author | Search for: Jiang, Weihong1ORCID identifier: https://orcid.org/0000-0002-7821-3837; Search for: Tang, Haipeng1; Search for: Bardwell, Jennifer A1 |
|---|
| Affiliation | - National Research Council of Canada. Advanced Electronics and Photonics
|
|---|
| Format | Text, Article |
|---|
| Subject | normally-off; gallium nitride; HEMT; power electronics; MBE regrowth |
|---|
| Abstract | In this paper, we report the fabrication of a normally-off AlGaN/GaN high electron mobility transistor (HEMT) using an ultra-thin AlGaN barrier layer structure on Si (111) substrate. Additional AlGaN layers were selectively regrown only on the ohmic contact areas. The fabricated device exhibits a positive threshold voltage of 0.3 V, a maximum drain output current of 753 mA mm⁻¹ at gate voltage of +4 V, and low gate leakage of 1.2 × 10⁻⁷ A mm⁻¹. The selective area growth method shows a promising way to achieve normally-off GaN based HEMTs with very good performance. |
|---|
| Publication date | 2021-03-26 |
|---|
| Publisher | IOP |
|---|
| In | |
|---|
| Language | English |
|---|
| Peer reviewed | Yes |
|---|
| Export citation | Export as RIS |
|---|
| Report a correction | Report a correction (opens in a new tab) |
|---|
| Record identifier | 604823cd-6a76-4b6d-b44c-94c6ce8af53a |
|---|
| Record created | 2023-02-21 |
|---|
| Record modified | 2023-02-21 |
|---|
