| DOI | Resolve DOI: https://doi.org/10.1117/12.947298 |
|---|
| Author | Search for: Landheer, D.1 ; Search for: Denhoff, M.1 ; Search for: Buchanan, M.1 ; Search for: Houghton, D. C.; Search for: Rowell, N. L.2 ; Search for: Teo, K. H.; Search for: McKinnon, G. H.1 ; Search for: McMullin, J. N. |
|---|
| Name affiliation | - National Research Council Canada. NRC Institute for Microstructural Sciences
- National Research Council Canada. NRC Institute for National Measurement Standards
|
|---|
| Sponsor | Search for: SPIE |
|---|
| Format | Text |
|---|
| Type | Article |
|---|
| Proceedings title | Quantum Well and Superlattice Physics II |
|---|
| Series title | Proceedings of SPIE; Volume 0943 |
|---|
| Conference | Quantum well and superlattice physics II, 17-18 March 1988, Newport Beach, California, USA |
|---|
| ISBN | 0892529784 |
|---|
| Pages | 102–106; # of pages: 5 |
|---|
| Abstract | Silicon p-n junctions and doping superlattices nipi's have been grown by molecular beam epitaxy (MBE) using an arsenic ion beam for n doping and a boric oxide source for p doping. The layers were characterised by secondary ion mass spectrometry (SIMS) and the electrical characteristics of nipi's and individual junctions were measured. The superlattices were evaporated through a silicon mask to create nini and pipi regions at the edges of mesas to which selective contacts of Au/Sb and PtSi were made to the n and p layers respectively. Our structures typically had from 10 to 20 periods with very thin or nonexistent i regions between the doped layers which were varied in the range 30 to 100 nm and doped to 5x1017-5x1018 at./cm3. The conductivity of the p layers was measured through split contacts after illumination with 632.8 nm laser pulses to determine the effective recombination lifetime. Lifetimes of 245 ms were measured at 85°K and factors limiting the achievement of longer lifetimes were investigated. |
|---|
| Publication date | 1988-06-18 |
|---|
| Language | English |
|---|
| NRC number | 1096 |
|---|
| NPARC number | 5763650 |
|---|
| Export citation | Export as RIS |
|---|
| Report a correction | Report a correction |
|---|
Record identifier | 6293e109-4e9d-4aeb-9072-1dad864f39e1 | | Record created | 2009-03-29 |
|---|
| Record modified | 2019-02-14 |
|---|
