| DOI | Resolve DOI: https://doi.org/10.1117/12.947298 |
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| Author | Search for: Landheer, D.1; Search for: Denhoff, M.1; Search for: Buchanan, M.1; Search for: Houghton, D. C.; Search for: Rowell, N. L.2; Search for: Teo, K. H.; Search for: McKinnon, G. H.1; Search for: McMullin, J. N. |
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| Affiliation | - National Research Council of Canada. NRC Institute for Microstructural Sciences
- National Research Council of Canada. NRC Institute for National Measurement Standards
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| Sponsor | Search for: SPIE |
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| Format | Text, Article |
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| Conference | Quantum well and superlattice physics II, 17-18 March 1988, Newport Beach, California, USA |
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| Abstract | Silicon p-n junctions and doping superlattices nipi's have been grown by molecular beam epitaxy (MBE) using an arsenic ion beam for n doping and a boric oxide source for p doping. The layers were characterised by secondary ion mass spectrometry (SIMS) and the electrical characteristics of nipi's and individual junctions were measured. The superlattices were evaporated through a silicon mask to create nini and pipi regions at the edges of mesas to which selective contacts of Au/Sb and PtSi were made to the n and p layers respectively. Our structures typically had from 10 to 20 periods with very thin or nonexistent i regions between the doped layers which were varied in the range 30 to 100 nm and doped to 5x1017-5x1018 at./cm3. The conductivity of the p layers was measured through split contacts after illumination with 632.8 nm laser pulses to determine the effective recombination lifetime. Lifetimes of 245 ms were measured at 85°K and factors limiting the achievement of longer lifetimes were investigated. |
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| Publication date | 1988-06-18 |
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| Language | English |
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| NRC number | NRC-INMS-1096 |
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| NPARC number | 5763650 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | 6293e109-4e9d-4aeb-9072-1dad864f39e1 |
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| Record created | 2009-03-29 |
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| Record modified | 2020-03-17 |
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