| DOI | Trouver le DOI : https://doi.org/10.1117/12.947298 |
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| Auteur | Rechercher : Landheer, D.1; Rechercher : Denhoff, M.1; Rechercher : Buchanan, M.1; Rechercher : Houghton, D. C.; Rechercher : Rowell, N. L.2; Rechercher : Teo, K. H.; Rechercher : McKinnon, G. H.1; Rechercher : McMullin, J. N. |
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| Affiliation | - Conseil national de recherches du Canada. Institut des sciences des microstructures du CNRC
- Conseil national de recherches du Canada. Institut des étalons nationaux de mesure du CNRC
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| Commanditaire | Rechercher : SPIE |
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| Format | Texte, Article |
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| Conférence | Quantum well and superlattice physics II, 17-18 March 1988, Newport Beach, California, USA |
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| Résumé | Silicon p-n junctions and doping superlattices nipi's have been grown by molecular beam epitaxy (MBE) using an arsenic ion beam for n doping and a boric oxide source for p doping. The layers were characterised by secondary ion mass spectrometry (SIMS) and the electrical characteristics of nipi's and individual junctions were measured. The superlattices were evaporated through a silicon mask to create nini and pipi regions at the edges of mesas to which selective contacts of Au/Sb and PtSi were made to the n and p layers respectively. Our structures typically had from 10 to 20 periods with very thin or nonexistent i regions between the doped layers which were varied in the range 30 to 100 nm and doped to 5x1017-5x1018 at./cm3. The conductivity of the p layers was measured through split contacts after illumination with 632.8 nm laser pulses to determine the effective recombination lifetime. Lifetimes of 245 ms were measured at 85°K and factors limiting the achievement of longer lifetimes were investigated. |
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| Date de publication | 1988-06-18 |
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| Langue | anglais |
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| Numéro du CNRC | NRC-INMS-1096 |
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| Numéro NPARC | 5763650 |
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| Exporter la notice | Exporter en format RIS |
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| Signaler une correction | Signaler une correction (s'ouvre dans un nouvel onglet) |
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| Identificateur de l’enregistrement | 6293e109-4e9d-4aeb-9072-1dad864f39e1 |
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| Enregistrement créé | 2009-03-29 |
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| Enregistrement modifié | 2020-03-17 |
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