Evaluation of HfxSi1-xO2 Deposited by Pulse-Mode MOCVD Using HfNEt24, ButMe2SiOH, and O2

Author	Search for: Chen, J-H; Search for: Landheer, Dolf¹; Search for: Wu, X.; Search for: Jones, A.; Search for: Rushworth, S.; Search for: Lei, T-F; Search for: Chao, T-S
Affiliation	National Research Council of Canada. NRC Institute for Microstructural Sciences
Format	Text, Article
Conference	2004 International Electron Devices and Materials Symposia, December 2004, National Chiao-Tung University, Hsinchu, Taiwan
NPARC number	12346452
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Record identifier	638f73bb-c8f8-45ee-8cb9-7987b4216075
Record created	2009-09-17
Record modified	2020-04-16