| Author | Search for: Molasa, M.; Search for: Kuldová, K.; Search for: Borysiuk, J.; Search for: Wasilewski, Z.1; Search for: Babinski, A. |
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| Affiliation | - National Research Council of Canada. NRC Institute for Microstructural Sciences
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| Format | Text, Article |
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| Subject | Anisotropic exchange; Effect of In; Energy ranges; Grown structures; InAs/GaAs; Microphotoluminescence; Neutral excitons; Self assembled quantum dots; Transmission electron; Anisotropy; Excitons; Semiconductor quantum dots; Transmission electron microscopy; Indium |
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| Abstract | The effect of In-flush technique application to the MBE-grown structure with self-assembled quantum dots is investigated in this work. The microphotoluminescence from structures with the InAs/GaAs dots grown with and without the In-flush has been investigated. We focus our attention on "not fully developed" dots, which can be clearly distinguished in the spectrum. The dots have also been identified in the transmission electron microscopy analysis of the structures. The In-flush does not influence a broad energy range of those features. Instead we have found that the anisotropic exchange energy splitting of neutral excitons confined in those in the structure grown with In-flush is substantially lower that the splitting in the structure with no In-flush. This observation confirms that the In-flush leads not only to better uniformity of self-assembled quantum dots but also to reduction of lateral potential, anisotropy, which is believed to result in the neutral exciton splitting. |
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| Publication date | 2011 |
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| In | |
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| Language | English |
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| Peer reviewed | Yes |
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| NPARC number | 21271290 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | 648e77af-0148-4493-9c59-9ea7f5ae39a9 |
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| Record created | 2014-03-24 |
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| Record modified | 2020-04-21 |
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